FMUSER Original New MGF2430A RF Power Transistor Power MOSFET Transistor-RF Transistor-FMUSER FM / TV Matangazo ya One-Stop Supplier

FMUSER Original New MGF2430A RF Power Transistor Power MOSFET Transistor MAELEZO MGF2430A, GaAs FET iliyo na N-channel schottkygate, imeundwa kwa L hadi Ku amplifiers za bendi. FEATURES ● Pato kubwa la nguvuP1dB = 30.5dBm (TYP) @ f = 14.5GHz ● Faida ya juu ya mstariGLP = 6.5dB (TYP.) @ F = 14.5GHz ● Uwezo mkubwa wa nguvuP.AE = 27% (TYP.) @ F = 14.5 GHz, P1dB ● Kifurushi cha chuma kilichotiwa muhuri APPLICATION ● Kwa L hadi Ku band amplifiers za nguvuUWASILI ● KUPIGA KIWANGO MAPENDEKEZO YAPENDEKEZA MASHARTI YA BIASHA Satu

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FMUSER Original New MGF2430A RF Power Transistor Power MOSFET Transistor

MAELEZO

MGF2430A, GaAs FET iliyo na N-channel schottkygate, imeundwa kwa L-Ku amplifiers za bendi.

VIPENGELE

●Nguvu kubwa ya patoP1dB = 30.5dBm (TYP) @ f = 14.5GHz

●Faida ya juu ya mstari GLP = 6.5dB (TYP.) @ F = 14.5GHz

●Ufanisi mkubwa wa nguvu P.AE = 27% (TYP.) @ F = 14.5GHz, P1dB

●Kifurushi cha chuma kilichotiwa muhuri APPLICATION

●Kwa L kwa Ku band amplifiers za nguvuUWANGO

●Kuchora bila kujali

MASHARTI YA BIASHARA YALIYOPENDEKEZWA

●Vds = Vitambulisho 10V = 300mA Rg = 500
●Ukadiriaji kamili kabisa
●Lango la VGDO la Chanzo cha Voltage
●Lango la VGSO kupata chanzo cha voltage
●Machafu yaliyojaa ya IDSS sasa
●Kubadilisha lango la sasa la IGR
●IGF Mbele ya lango la sasa
●PT * 1 Jumla ya utaftaji wa nguvu
●Joto la Tch Cannel

●Joto la kuhifadhi Tstg * 1: Tc = 25 ° C (Ta = 25 ° C)