FMUSER Original New MRF6V2150NB SMD RF Power Transistor Tube High Frequency Tube High Power Power Moduli Module Power MOSFET Transistor-RF Transistor-FMUSER FM / TV Matangazo Moja-Stop Supplier

FMUSER Original New MRF6V2150NB SMD RF Power Transistor Tube High Frequency Tube Power Amplification Module Power MOSFET Transistor FMUSER original new MRF6V2150NB RF Power Transistor Power MOSFET Transistor iliyoundwa haswa kwa pato kubwa la ishara-kubwa na matumizi ya dereva na masafa hadi 450 MHz. Vifaa havilinganishwi na vinafaa kutumiwa katika matumizi ya viwandani, matibabu na kisayansi Maelezo ya Bidhaa: Nambari ya Sehemu: MRF6V2150NB Maelezo: Nambari ya Mwisho ya N-Channel ya Mwisho ya Nguvu RF MOSFET, 10-450 MHz, 150 W, 50 V Sifa: Utendaji wa kawaida wa CW saa 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Pow

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FMUSER Original Mpya MRF6V2150NB SMD RF Power Transistor Tube High Frequency Tube Power Amplification Module Power MOSFET Transistor

FMUSER asili mpya MRF6V2150NB RF Power Transistor Power MOSFET Transistor diliyowekwa kimsingi kwa pato kubwa la ishara kubwa na matumizi ya derevana masafa hadi 450 MHz. Vifaa havilinganishwi na vinafaatumia katika matumizi ya viwanda, matibabu na kisayansi

Bidhaa Maelezo:

PNambari ya sanaa: MRF6V2150NB

Ufafanuzi: Nambari ya baadaye ya N-Channel Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V

vipengele:

Utendaji wa kawaida wa CW saa 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts
Faida ya Nguvu: 25.5 dB
Ufanisi wa kukimbia: 69%
Uwezo wa Kushughulikia 10: 1 VSWR, @ 50 Vdc, 210 MHz, 150 Watts Nguvu ya Pato.
Jumuishi ESD Ulinzi
Bora mafuta Utulivu
Inawezesha Mwongozo wa Kupata Udhibiti, ALC na Mbinu za Kubadilisha Moduli
225 ° C Kifurushi cha plastiki chenye uwezo
RoHS Uppfyller

Vigezo vya jumla:

Aina ya Transistor: LDMOS

Teknolojia: Si

Sekta ya Maombi: ISM, Matangazo

Maombi: Sayansi, Matibabu

CW / Pulse: CW

Mzunguko: 10 hadi 450 MHz

Nguvu: 51.76 dBm

Nguvu (W): 149.97 W

Nguvu ya CW: 150 W

Faida ya Nguvu (Gp): 23.5 hadi 26.5 dB

Ingizo Kupoteza Upotezaji: -17 hadi -3 dB

VSWR: 10.00: 1

Polarity: N-Kituo

Ugavi wa Voltage: 50 V

Kizingiti cha Voltage: 1 hadi 3 Vdc

Kuvunjika kwa Voltage - Chanzo cha kukimbia: 110 V

Voltage - Chanzo cha Lango (Vgs): - 0.5 hadi 12 Vdc

Ufanisi wa kukimbia: 0.683

Tolea kwa sasa: 450 mA

Impedance Zs: 50 Ohms

Upinzani wa joto: 0.24 ° C / W.

Aina ya Kifurushi: Flange

Kifurushi: KESI 1484-04, STYLE 1 KWA - 272 WB - 4 PLASTIKI

RoHS: Ndiyo

Joto la Uendeshaji: digrii 150 C

Joto la Uhifadhi: bei ya digrii 65

Ufungaji ni pamoja na:
1xMRF6V2150NB RF Power Transistor

Bei (USD)	Uchina (PCS)	Meli (USD)	Jumla (USD)	meli Method	Malipo
89	1	0	89	airmail Shipping
				airmail Shipping

uliopita:FMUSER Original Mpya MRF6VP11KH RF Power Transistor Power MOSFET Transistor

next:FMUSER Asili Mpya BLF861A RF UHF Power Transistor Power MOSFET Transistor

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